| Autor: |
Dvoretckaia, Liliia, Gridchin, Vladislav, Mozharov, Alexey, Maksimova, Alina, Dragunova, Anna, Melnichenko, Ivan, Mitin, Dmitry, Vinogradov, Alexandr, Mukhin, Ivan, Cirlin, Georgy |
| Předmět: |
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| Zdroj: |
Nanomaterials (2079-4991); Jun2022, Vol. 12 Issue 12, p1993-N.PAG, 9p |
| Abstrakt: |
The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mismatched Si wafers. Here, we present molecular beam epitaxy of regular arrays n-GaN/i-InGaN/p-GaN heterostructured nanowires and tripods on Si/SiO2 substrates prepatterned with the use of cost-effective and rapid microsphere optical lithography. This approach provides the selective-area synthesis of the ordered nanowire arrays on large-area Si substrates. We experimentally show that the n-GaN NWs/n-Si interface demonstrates rectifying behavior and the fabricated n-GaN/i-InGaN/p-GaN NWs-based LEDs have electroluminescence in the broad spectral range, with a maximum near 500 nm, which can be employed for multicolor or white light screen development. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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