| Autor: |
Kojima, Kazutoshi, Sato, Shin-ichiro, Ohshima, Takeshi, Kuroki, Shin-Ichiro |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/28/2022, Vol. 131 Issue 24, p1-8, 8p |
| Abstrakt: |
4H-SiC epitaxial layers with ultrahigh resistivity of over 1010 Ω cm were successfully grown by using a hot wall chemical vapor deposition system with vanadium doping. The resistivity of the vanadium doped epilayer was found to be strongly dependent on the types of dopant impurities. The resistivity of n-type-based vanadium doped semi-insulating 4H-SiC epilayers showed stronger dependence on vanadium incorporation than that of p-type-based epilayers. This means that the carrier trap characteristics of vanadium atoms may differ with respect to electrons and holes. As the result, an ultrahigh resistivity of over 1010 Ω cm was realized on an n-type-based 4H-SiC epilayer with vanadium doping. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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