20‐1: Distinguished Paper: Advanced Hybrid Process with Back Contact IGZO‐TFT.

Autor: Honjo, Masatomo, Takeda, Yujiro, Aman, Mehadi, Ito, Kazuatsu, Tanaka, Kohei, Matsukizono, Hiroshi, Nakamura, Wataru
Předmět:
Zdroj: SID Symposium Digest of Technical Papers; Jun2022, Vol. 53 Issue 1, p214-217, 4p
Abstrakt: We propose the new structure of hybrid backplane technology with IGZO‐TFT and LTPS. In this structure, IGZO is directly connected with inter metal to reduce the number of layers. The uniformity of contact resistance between IGZO and metal was less than 20n at G4.5 which is enough for using signal bass line. The characteristics of IGZO‐TFT uniformity and reliability were good enough for mass‐production. The panel with the new hybrid structure backplane has been adopted into practical use as the smartphone with 6.6 inches flexible OLED panel. We believe that the proposed structure would be useful for the mass production of high performance OLED display at low cost production. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index