| Autor: |
Fang, Bin, Sánchez‐Tejerina San José, Luis, Chen, Aitian, Li, Yan, Zheng, Dongxing, Ma, Yinchang, Algaidi, Hanin, Liu, Kai, Finocchio, Giovanni, Zhang, Xixiang |
| Předmět: |
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| Zdroj: |
Advanced Functional Materials; 6/24/2022, Vol. 32 Issue 26, p1-9, 9p |
| Abstrakt: |
Electrical manipulation of exchange bias (EB) enables an additional degree of freedom in the design of innovative spintronic devices. However, the electrical switching of EB via spin–orbit torque (SOT) has not been achieved in magnetic tunnel junctions (MTJs), which are one of the building blocks in spintronic devices. Herein, based on the SOT in antiferromagnets (AFMs), perpendicular EB reversal across AFM IrMn and ferromagnetic (FM) [Co/Pt]2 multilayer is demonstrated both in extended and confined geometries. In particular, in three‐terminal perpendicular MTJ devices, the switching of the EB using the SOT is achieved. Both high and low resistances are observed at the zero magnetic field during EB switching. The findings provide the direction to include a new functionality in spintronic devices and will inspire future research in exploring the electrical control of EB in SOT magnetic random access memory (SOT‐MRAM). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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