| Autor: |
Jiaqi, Yin, Chunyan, Yu, Hailiang, Dong, Tianbao, Li, Wei, Jia, Fuhong, Mei, Guangmei, Zhai, Zhuxia, Zhang |
| Předmět: |
|
| Zdroj: |
Philosophical Magazine; Jul2022, Vol. 102 Issue 13, p1247-1260, 14p |
| Abstrakt: |
In order to adjust the band gap of n-ZnO nanorods (NRs)/p-GaN heterojunction and improve its conductivity, a Cu and Ag co-doping ZnO nanorod array has been synthesised on a p-GaN/Al2O3 substrate by a hydrothermal method at low temperature, in addition, investigated the co-doping effect on the morphology, microstructure and electrical/optical properties. Compared with other samples, the average diameter of the co-doped ZnO NRs is larger, and there are fewer NRs per unit area (density). According to X-ray diffraction analysis, the synthesised ZnO NRs had a preferential [001] growth direction and exhibited a hexagonal wurtzite structure. Compared with undoped ZnO NRs, the UV emission peaks of all doped ZnO NRs had a slight red-shift, which may be related to the combined effect of surface resonance and band gap renormalisation effect. Ag+Cu co-doping can also reduce the band gap of the ZnO NRs. The I-V characteristics curve indicates that Ag+Cu co-doping can greatly improve the electrical properties of the heterojunction. This study demonstrates the possibility of ZnO NRs by Ag+Cu co-doping for potential applications in ultraviolet light-emitting diode. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
