| Autor: |
Fu, Yu, Chang, Yuhao, Kono, Shozo, Hiraiwa, Atsushi, Kanehisa, Kyotaro, Zhu, Xiaohua, Xu, Ruimin, Xu, Yuehang, Kawarada, Hiroshi |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; May2022, Vol. 69 Issue 5, p2236-2242, 7p |
| Abstrakt: |
In this article, the normally- OFF oxidized Si-terminated (C–Si) diamond metal–oxide–semiconductor field-effect transistors (MOSFETs) with as-deposited 0.5-nm silicon on diamond annealed at high temperature as the subsurface p-channel were presented for the first time. A novel method utilizing both a metal mask to realize the regrown heavily boron-doped (001) diamond layer first (p+-diamond-first) and a molecular beam deposition (MBD) method to procure atomic-scale silicon deposition was achieved. Scanning transmission electron microscopy (STEM) and energy-dispersive X-ray spectroscopy (EDS) element mapping results suggest that the C–Si diamond/Al2O3 interface is quite continuous and atomically flat. A remarkably high threshold voltage (${V}_{\text{TH}}$) of −10 V and a maximum drain current density (${I}_{D\_{}{\text{MAX}}}$) of −156 mA/mm are simultaneously achieved in the fabricated devices. The devices with different source and drain (S/D) distances ($L_{\text{SD}}$) deliver robust ${V}_{\text{TH}}$ results and feature low OFF-state S/D leakage current $\vert {I}_{\text{leakage}}\vert $ of ~ $6\times10$ −6 mA/mm at ${V}_{\text{GS}}$ = 0 V. The extracted field-effect mobility is as high as 127 cm2 $\cdot \text{V}$ −1 $\cdot \text{s}$ −1 and the interface state density is as low as $4.35\times10$ 12 eV−1 $\cdot $ cm−2. These competitive results reveal that this first attempt of employing the combination of p+-diamond-first and MBD approaches promotes the integration of the advanced silicon manufacturing process with wide bandgap diamond material for power applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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