| Autor: |
Zhang, Wentong, Zhu, Le, Tian, Fengrun, Luo, Jie, He, Nailong, Zhang, Zhili, Zhang, Sen, Zhang, Jinping, Qiao, Ming, Li, Zhaoji, Zhang, Bo |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; May2022, Vol. 69 Issue 5, p2528-2533, 6p |
| Abstrakt: |
A homogenization field lateral double diffused metal oxide semiconductor based on the trench-stopped depletion (TS-HOF LDMOS) is proposed and experimentally realized in this article. By solving the 3-D Poisson equation, the curvature factor ${k}$ is introduced to give the quantitative relationship between the maximum field ${E}_{\text {max}}$ and parameters of the 3-D bulk curvature effect. Based on the theory, the trench-stop concept and the TS-HOF structure were proposed to reduce ${E}_{\text {max}}$. In the new structure, the depletion of the last discrete metal insulator semiconductor (MIS) array is stopped by process compatible drain trenches for suppressing the serious 3-D bulk curvature effect especially at high voltage, which is a special technology for improving breakdown voltage ${V}_{\text {B}}$ of the complementary homogenization field (C-HOF) LDMOS. It was demonstrated by experiments that ${V}_{\text {B}}$ of the TS-HOF LDMOS is more than 15% higher than that of the C-HOF device while maintaining the same specific ON-resistance ${R} _{\text {on,sp}}$. The TS-HOF LDMOS achieved a measured ${V}_{\text {B}}$ of 675 V and a ${R} _{\text {on,sp}}$ of 49.1 $\text{m}\Omega \,\cdot $ cm2, which represents a reduction of 43.2% when compared with the theoretical value of the triple reduced surface field (RESURF) technology. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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