Electrophysical properties of layout composition of n+CdsS-nSdS-nSi structure.

Autor: Sapaev, I. B., Sapaev, B., Umarov, A. V., Kamalova, D. I., Kasimova, G. A.
Předmět:
Zdroj: AIP Conference Proceedings; 6/16/2022, Vol. 2471 Issue 1, p1-4, 4p
Abstrakt: A layered composition of n+CdS–nCdS-nSi structure was obtained. The temperature-voltage-ampere characteristic of the layered composition of n+CdS–nCdS-nSi structure was investigated. The electrophysical parameters of the layered composition of n+CdS-nCdS-nSi structure were determined. The appearance of the sublinear area on the volt-ampere characteristic is conditioned by the appearance of counter directed ambipolar diffusion of nonequilibrium carriers and their ambipolar drift. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index