| Autor: |
Cheema, Suraj S., Shanker, Nirmaan, Hsu, Cheng‐Hsiang, Datar, Adhiraj, Bae, Jongho, Kwon, Daewoong, Salahuddin, Sayeef |
| Předmět: |
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| Zdroj: |
Advanced Electronic Materials; Jun2022, Vol. 8 Issue 6, p1-10, 10p |
| Abstrakt: |
In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, ferroelectric tunnel junctions (FTJs) have emerged as a new resistive switching memory which exploits polarization‐dependent tunnel current across a thin ferroelectric barrier. This work integrates FTJs with complementary metal‐oxide‐semiconductor‐compatible Zr‐doped HfO2 (Zr:HfO2) ferroelectric barriers of just 1 nm thickness, grown by atomic layer deposition on silicon. These 1 nm Zr:HfO2 tunnel junctions exhibit large polarization‐driven electroresistance (>20 000%), the largest value reported for HfO2‐based FTJs. In addition, due to just a 1 nm ferroelectric barrier, these junctions provide large tunneling current (>1 A cm−2) at low read voltage, orders of magnitude larger than reported thicker HfO2‐based FTJs. Therefore, this proof‐of‐principle demonstration provides an approach to simultaneously overcome three major drawbacks of prototypical FTJs: a Si‐compatible ultrathin ferroelectric, large electroresistance, and large read current for high‐speed operation. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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