| Autor: |
Guo, Zhinan, Cao, Rui, Wang, Huide, Zhang, Xi, Meng, Fanxu, Chen, Xue, Gao, Siyan, Sang, David K, Nguyen, Thi Huong, Duong, Anh Tuan, Zhao, Jinlai, Zeng, Yu-Jia, Cho, Sunglae, Zhao, Bing, Tan, Ping-Heng, Zhang, Han, Fan, Dianyuan |
| Předmět: |
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| Zdroj: |
National Science Review; May2022, Vol. 9 Issue 5, p1-7, 7p |
| Abstrakt: |
Two-dimensional (2D) indium selenide (InSe) has been widely studied for application in transistors and photodetectors, which benefit from its excellent optoelectronic properties. Among the three specific polytypes (γ -, ϵ - and β -phase) of InSe, only the crystal lattice of InSe in β -phase (β -InSe) belongs to a non-symmetry point group of |$D_{6h}^4$| , which indicates stronger anisotropic transport behavior and potential in the polarized photodetection of β -InSe-based optoelectronic devices. Therefore, we prepare the stable p-type 2D-layered β -InSe via temperature gradient method. The anisotropic Raman, transport and photoresponse properties of β -InSe have been experimentally and theoretically proven, showing that the β -InSe-based device has a ratio of 3.76 for the maximum to minimum dark current at two orthogonal orientations and a high photocurrent anisotropic ratio of 0.70 at 1 V bias voltage, respectively. The appealing anisotropic properties demonstrated in this work clearly identify β -InSe as a competitive candidate for filter-free polarization-sensitive photodetectors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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