| Autor: |
Abdelaaziz Boulgheb, Lakhdara, Maya, Latreche, Saida |
| Předmět: |
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| Zdroj: |
Russian Microelectronics; Jun2022, Vol. 51 Issue 3, p192-198, 7p |
| Abstrakt: |
The purpose of this paper is the study and the analysis of the impact of Polysilicon base on the phenomenon of self-heating and electrical performance for HBT SiGe transistor integrate from a 0.13 μm BiCMOS9 architecture: according to two different positions: below the intrinsic base SiGe, and at above this same base. In order to optimize the effect of the self-heating of these HBT and to see the impact of the poly base of the component, we used to simulate the structure of HBT SiGe, the COMSOL Multiphysics simulator. It is based on macroscopic semiconductor equations using the Drift-Diffusion Model (DDM), coupled to the interface HTS (Heat Transfer in Solids). An analysis of the effect of self-heating in SiGe TBHs from a 0.13 μm BiCMOS9 was achieved with two different Polysilicon architectures and above the SiGe base, in order to better understand the distribution of the heat on the component, to raise the maximum temperature on the HBT (Tmax). The static and dynamic performance of TBH SiGe, as well as self-heating is much better for a structure with Polysilicon below the SiGe base. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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