| Autor: |
Castillo, Ivan, Mishra, Karuna Kara, Katiyar, Ram S. |
| Předmět: |
|
| Zdroj: |
Coatings (2079-6412); May2022, Vol. 12 Issue 5, p649-N.PAG, 12p |
| Abstrakt: |
Vanadium sesquioxide V2O3, a transition metal oxide, is an important metal transition insulator due to its potential applications in novel electronic and memory devices. V2O3 thin films of thickness around 230 nm were grown on Si/SiO2/Ti/Pt substrates at deposition temperature of 723 K in a controlled Ar:O2 atmosphere of 35:2.5 sccm employing Direct Current (DC) magnetron sputtering. X-ray diffraction studies confirmed single phase of the material stabilized in corundum rhombohedral R 3 ¯ C phase. X-ray photoelectron spectroscopic results revealed chemical oxidation states are of V3+ and O2− and have nearly stochiometric elemental compositions in the films. Magnetization studies down to 10 K predicts a canted antiferromagnetic transition around 55 K. Out of 7 expected Raman active modes (2A1g + 5Eg), two A1g Raman active modes at 242 and 500 cm−1 were observed at ambient R 3 ¯ C phase. Temperature dependent Raman spectroscopic studies carried out from 80 to 300 K identified a monoclinic to rhombohedral phase transition at ~143 K. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
