| Autor: |
Zhao, Chunlei, Jiao, Teng, Chen, Wei, Li, Zeming, Dong, Xin, Li, Zhengda, Diao, Zhaoti, Zhang, Yuantao, Zhang, Baolin, Du, Guotong |
| Předmět: |
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| Zdroj: |
Coatings (2079-6412); May2022, Vol. 12 Issue 5, p645-N.PAG, 9p |
| Abstrakt: |
The homoepitaxial Si-doped Ga2O3 film prepared by metal–organic chemical vapor deposition (MOCVD) was reported in this paper. The film thickness reached 4.5 microns, a relatively high value for MOCVD. The full width at half maxima of the (002) diffraction plane of the film was 26.3 arcsec, thus showing high crystalline quality. The film showed n−-type properties with a doping concentration of 3.6 × 1016 cm−3 and electron mobility of 137 cm2/V·s. In addition, the element composition and stress state of the film were characterized and analyzed. This indicates that the MOCVD, supporting high-quality, high-precision epitaxy, is promising for Ga2O3 power devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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