| Autor: |
Bleyan, Yuri Y., Mantashyan, Paytsar A., Kazaryan, Eduard M., Sarkisyan, Hayk A., Accorsi, Gianluca, Baskoutas, Sotirios, Hayrapetyan, David B. |
| Zdroj: |
Nanomaterials (2079-4991); May2022, Vol. 12 Issue 9, p1412-1412, 12p |
| Abstrakt: |
We have presented a theoretical investigation of exciton and biexciton states for the ground and excited levels in a strongly oblate ellipsoidal quantum dot made from GaAs. The variational trial wave functions for the ground and excited states of the exciton and biexciton are constructed on the base of one-particle wave functions. The energies for the ground and excited levels, depending on the ellipsoidal quantum dot's geometrical parameters, are depicted in the framework of the variational method. The oscillator strength of the transition from exciton to biexciton states for ground and excited levels is investigated as a function of the ellipsoidal quantum dot's small and large semiaxes. The third-order optical susceptibilities of ground and excited biexcitons around one-photon and two-photon resonances are calculated as a function of the photon energy. The dependences of third-order optical susceptibilities for the ground and excited levels on the photon energy for different values of the ellipsoidal quantum dot's semiaxis are revealed. The absorption coefficients in the ellipsoidal quantum dot, both for ground and excited states of exciton and biexciton, are calculated. The absorption coefficients for the ground level of exciton and biexciton for the fixed value of the large semiaxis and for the different values of the small semiaxis are determined. Finally, the two-photon absorption coefficient of the biexciton in the GaAs ellipsoidal quantum dot is computed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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