Measuring the Interatomic Distance in a Silicon Crystal Lattice Using an Optical Scanning Interferometer.

Autor: Sysoev, E. V., Latyshev, A. V.
Zdroj: Optoelectronics Instrumentation & Data Processing; Dec2021, Vol. 57 Issue 6, p561-568, 8p
Abstrakt: We study the influence of the characteristics of the optical system of an interferometer on the distribution of spectral power density of partially coherent light passing through the system. The results of measurements of the effective wavelength for a partially coherent light source installed in the interferometer are presented. It has been shown that the optical system of the interferometer distorts the light source spectrum, which leads to a systematic error in measurements. The use of atomically smooth surfaces as mirrors in reference and measuring arms of the interferometer made it possible to study the influence of the optical system of the interferometer on phase distortions. It has been found that optical system distortions lead to a systematic error in the topography measurement of more than 5 nm in height. The use of an atomically smooth surface as a reference measurement object makes it possible to significantly reduce this error (to 0.12 nm). The results of measurements of the echelon of atomic steps with a countable number of monatomic layers on the silicon crystal surface are presented. For the first time, experimental methods of low-coherence optical interferometry were used to measure the average value of the interatomic (interplanar) distance in a [111] orientation Si crystal lattice, which was Å. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index