| Autor: |
Thome, Fabian, Schafer, Frank, Turk, Sener, Yagoubov, Pavel, Leuther, Arnulf |
| Zdroj: |
IEEE Microwave & Wireless Components Letters; May2022, Vol. 32 Issue 5, p430-433, 4p |
| Abstrakt: |
This letter presents a 67–116-GHz low-noise amplifier (LNA) module with state-of-the-art cryogenic noise performance. The LNA is based on a monolithic microwave integrated circuit (MMIC) that is fabricated in a 50-nm metamorphic high-electron-mobility transistor (mHEMT) technology. The MMIC is packaged in a WR10 waveguide split-block housing and uses fused silica ${E}$ -plane microstrip-to-waveguide transitions. For a 67–116-GHz bandwidth, the amplifier exhibits average noise temperatures (${T}~_{{\text {e}}}$) at 15 and 300 K of 21.4 and 194 K, respectively. A minimum ${T}~_{{\text {e}}}$ of 13.6 K is achieved at 72.2 GHz. To the best of the authors’ knowledge, this LNA demonstrates a new low-noise benchmark for room temperature and cryogenic noise temperatures in the extended ${W}$ -band frequency range. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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