| Autor: |
Sandhu, Harmanpreet Kaur, John, John Wellington, Jakhar, Alka, Sharma, Abhishek, Jain, Alok, Das, Samaresh |
| Předmět: |
|
| Zdroj: |
Nanotechnology; 7/18/2022, Vol. 33 Issue 30, p1-11, 11p |
| Abstrakt: |
Integration of nanolayered metal chalcogenides with wide-bandgap semiconductors forming pn heterojunction leads to the way of high-performance photodetection. This work demonstrates the fabrication of a few nanometer thick Molybdenum diselenide (MoSe2)/Mg-doped Gallium Nitride (p-GaN) heterostructure for light detection purposes. The device exhibits low noise broadband spectral response from ultraviolet to near-infrared range (300â€"950 nm). The band-alignment and the charge transfer at the MoSe2/p-GaN interface promote self-powered photodetection with high photocurrent to dark current ratio of 2000 and 1000 at 365 nm and 640 nm, respectively. A high responsivity of 130 A Wâ'1, detectivity of 4.8 × 1010 Jones, and low noise equivalent power of 18 fW/Hz1/2 at 365 nm is achieved at an applied bias of 1 V. Moreover, the transient measurements reveal a fast rise/fall time of 407/710 ÎĽ sec for the fabricated device. These outcomes exemplify the viability of MoSe2/p-GaN heterostructure for high-speed and low-noise broadband photodetector applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
