| Autor: |
Wang, Wei Sheng, Ren, Zheng Yu, Shi, Zhi Wen, Xiao, Hui, Zeng, Yu Heng, Zhu, Li Qiang |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; May2022, Vol. 43 Issue 5, p737-740, 4p |
| Abstrakt: |
Flexible nanocellulose-based solid-state electrolyte gated indium-tin-oxide (ITO) pseudo-diode is proposed. The device exhibits good electrical performances against mechanical stress. With gate programming, pseudo-diode performances are modulated correspondingly. Furthermore, effective synaptic weight updating strategy is proposed, resulting in a high recognition accuracy of ~91.7% for MNIST handwritten digits. The flexible nanocellulose gated pseudo-diode would have potentials in wearable intelligent platforms. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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