| Autor: |
Ma, Jinbang, Zhang, Yachao, Yao, Yixin, Zhang, Tao, Li, Yifan, Feng, Qian, Bi, Zhen, Zhang, Jincheng, Hao, Yue |
| Předmět: |
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| Zdroj: |
Journal of Electronic Materials; Jun2022, Vol. 51 Issue 6, p3342-3349, 8p |
| Abstrakt: |
In this work, the influence of Al preflow on the uniformity of an aluminum nitride (AlN) nucleation layer grown on Si substrate has been investigated herein, finding that increasing the gas flow rate appropriately during the preflow of aluminum can greatly improve the uniformity of dislocations, as well as the crystal quality and surface morphology of the nucleation layer. The full width at half maximum (FWHM) of the AlN (102) plane in the center, half of the radius and the edge decreases from 826 arcsec/897 arcsec/1196 arcsec to 691 arcsec/738 arcsec/900 arcsec, respectively. Moreover, the sheet resistance uniformity of aluminum gallium nitride/gallium nitride (AlGaN/GaN) grown on the optimized AlN layer is reduced from 6.66% to 2.84%, which is a significant improvement and beneficial to the improvement of the performance of GaN-based devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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