| Autor: |
Xu, Siyuan, Liu, Lining, Qu, Guangming, Zhang, Xingfei, Jia, Chunyang, Wu, Songhao, Ma, Yuanxiao, Lee, Young Jin, Wang, Guodong, Park, Ji-Hyeon, Zhang, Yiyun, Yi, Xiaoyan, Wang, Yeliang, Li, Jinmin |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 4/14/2022, Vol. 120 Issue 15, p1-6, 6p |
| Abstrakt: |
A fin field-effect transistor (FinFET) based on single β-Ga2O3 nanowire with a diameter of ∼60 nm transferred to Si substrate is demonstrated. The FinFET device shows good saturation performance within a drain-to-source voltage up to 5 V and exhibits a high on/off ratio of ∼4 × 108, a system-limit low leakage current (∼4 fA), and a relatively low subthreshold swing (∼110 mV). Simulation shows that the channel of the FinFET depletes much faster than that of the back-gate FET with negative gate bias, which is consistent with the measurement results. Moreover, trap-related 1/f noise and 1/f2 noise have been identified according to low frequency noise analysis, and a carrier number fluctuation is expected to be the dominant 1/f noise mechanism in the β-Ga2O3 FinFET in this work. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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