| Autor: |
Vuorinen, Vesa, Ross, Glenn, Klami, Anton, Dong, Hongqun, Paulasto-Krockel, Mervi, Wernicke, Tobias, Ponninger, Anneliese |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Components, Packaging & Manufacturing Technology; Mar2022, Vol. 12 Issue 3, p446-453, 8p |
| Abstrakt: |
The wafer-level solid liquid interdiffusion (SLID) bonds carried out for this work take advantage of the Cu–In–Sn ternary system to achieve low-temperature interconnections. The 100-mm Si wafers had $\mu $ -bumps from $250~\mu \text{m}$ down to $10~\mu \text{m}$ fabricated by consecutive electrochemical deposition of Cu, Sn, and In layers. The optimized wafer-level bonding processes were carried out by EV Group and Aalto University across a range of temperatures from 250 °C down to 170 °C. Even though some quality-related process challenges were observed, it could be verified that high strength bonds with low defect content can be achieved even at a low bonding temperature of 170 °C with an acceptable 1-h wafer-level bonding duration. The microstructural analysis revealed that the bonding temperature significantly impacts the obtained phase structure as well as the number of defects. A higher (250 °C) bonding temperature led to the formation of Cu3Sn phase in addition to Cu6(Sn,In)5 and resulted in several voids at Cu3Sn|Cu interface. On the other hand, with lower (200 °C and 170 °C) bonding temperatures, the interconnection microstructure was composed purely of void-free Cu6(Sn,In)5. The mechanical testing results revealed the clear impact of bonding quality on the interconnection strength. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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