Autor: |
Pattipaka, Srinivas, Dobbidi, Pamu, Pundareekam Goud, J., James Raju, K. C., Pradhan, Gobinda, Sridhar, V. |
Předmět: |
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Zdroj: |
Journal of Materials Science: Materials in Electronics; Apr2022, Vol. 33 Issue 11, p8893-8905, 13p |
Abstrakt: |
Herein, we have investigated the optical and microwave dielectric properties of Bi0.5Na0.5TiO3 (BNT) thin films grown under different oxygen pressure (PO2) using the pulsed laser deposition technique. The X-ray diffraction measurements confirm the single phase of BNT and the secondary phase and a further reduction in the secondary phase and increase in the BNT phase with PO2, which signifies the close relationship between the crystal structure and oxygen content. The shift of Raman-active TO1, TO2, and TO3 modes towards higher wavelengths and increase in mode intensity with PO2 indicating the degree of the film of crystallinity. The local roughness (αloc) of all films obtained as ∼ 0.85 and the interface width (ω) and lateral correlation length (ξ) of films vary with PO2. Also, the films exhibit an increase in refractive index and reduction in the optical bandgap due to improvement in crystallinity and reduction in the oxygen vacancies. The microwave dielectric properties show that a strong PO2 depends on the higher dielectric constant (εr = 336) with lower loss (tanδ = 0.0093) at 5 GHz, which shows the potential applications in high-frequency devices. [ABSTRACT FROM AUTHOR] |
Databáze: |
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