| Autor: |
Jethwa, Vibhutiba P., Patel, Kunjal, Pathak, Vivek M., Solanki, Gunvant K. |
| Předmět: |
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| Zdroj: |
Journal of Materials Science: Materials in Electronics; Apr2022, Vol. 33 Issue 11, p8734-8740, 7p |
| Abstrakt: |
The crystals of ternary-mixed compounds of group IV–VI have been grown using the direct vapour transport technique. The grown crystals of SnS0.75Se0.25 were characterized to investigate the compositional, structural, electrical and optical properties using appropriate techniques. The composition analysis confirms the stoichiometric proportion of Sn, S and Se. The structural analysis of the grown crystals reveals their layered-type growth mechanism and crystallinity of grown materials. The selected area electron diffraction patterns were also recorded from nanocrystals using e-beams. The formation of SnS0.75Se0.25 ternary alloy was confirmed by X-ray photoelectron spectroscopy. The temperature-dependent electrical resistivity measurement was performed to study the anisotropy of grown layered ternary alloy. From optical absorption spectra, the optical bandgap of the sample was determined. The obtained results were discussed to assess the suitability of the SnS0.75Se0.25 crystal for the fabrication of optoelectronic devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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