Autor: |
Liu, Jing, Xu, Yuanze, Yi, Futing |
Předmět: |
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Zdroj: |
Journal of Materials Science: Materials in Electronics; Apr2022, Vol. 33 Issue 10, p8171-8178, 8p |
Abstrakt: |
It is the first time that the Titanium dioxide (TiO2) nanopillars are fabricated on the silicon (Si) wafer surface for the photoresistor application. Countless pencil-liked Si pillars with about 400 nm average diameter and 1.8 μm height are fabricated on the Si wafer surface firstly to increase the adhesion between the TiO2 nanostructures and the Si surface. With 50 nm thickness seed layer deposition, the TiO2 nanorods are synthesized through the hydrothermal method. After 3 h of hydrothermal synthesizing, the TiO2 nanorods with 150 nm average diameter and 1 μm length packed the Si pillars entirely. The countless Si pillars morphology and the seed layer are proved to be the two necessary conditions for the TiO2 nanorods growing on the Si wafer surface. Through the XRD testing, the TiO2 nanorods on the Si pillars surface are crystallized well with rutile structure after more than 2 h of hydrothermal reaction. The reflectivity and absorption curves of the TiO2 nanorods/Si pillars structure reveal that the TiO2 nanorods have an obvious absorption to the incoming light photons for wavelength less than 400 nm. The photosensitive properties testing results prove that this TiO2 nanorods/ Si pillars structure has a stable and repeatable photosensitive performance for both the white light and the light with 365 nm wavelength. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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