| Autor: |
Guo, Yue, Song, Weidong, Liu, Qing, Sun, Yiming, Chen, Zhao, He, Xin, Zeng, Qingguang, Luo, Xingjun, Zhang, Ruiqing, Li, Shuti |
| Zdroj: |
Journal of Materials Chemistry C; 4/7/2022, Vol. 10 Issue 13, p5116-5123, 8p |
| Abstrakt: |
Commonly, a narrowband photodetector that can detect specific wavelengths is obtained by integrating a broadband photodetector with an external optical filter. However, this integration significantly increases the structural complexity and cost, and reduces the sensitivity. Herein, we demonstrate a filter-free, ultra-narrowband, ultraviolet photodetector based on a porous GaN/MoO3 heterojunction. Porous GaN with reduced defects and enhanced light trapping was fabricated by a facile photoelectrochemical etching method. The optimized porous GaN/MoO3 photodetector shows visible-blind (peaked at 370 nm) and ultra-narrowband (FWHM <10 nm) ultraviolet photoresponse. Moreover, the photodetector exhibits a large light-to-dark current ratio (nearly 105 at −3 V), along with a remarkable responsivity, external quantum efficiency, and detectivity of 187.5 mA W−1, 62.8%, and 4.34 × 1012 Jones, respectively. The highly-performing and narrowband response makes the porous GaN/MoO3 ultraviolet photodetector promising for secure optical communication systems. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
