| Autor: |
Langørgen, Amanda, Zimmermann, Christian, Kalmann Frodason, Ymir, Førdestrøm Verhoeven, Espen, Michael Weiser, Philip, Michael Karsthof, Robert, Basile Varley, Joel, Vines, Lasse |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/21/2022, Vol. 131 Issue 11, p1-9, 9p |
| Abstrakt: |
The influence of heat treating n -type bulk β -Ga 2 O 3 in hydrogen (H 2) and argon (Ar) gases on the presence of the defect level commonly labeled as E 1 was studied. Fourier transform-infrared spectroscopy confirms that hydrogen (H) is incorporated into β -Ga 2 O 3 during H 2 annealing at 900 °C. Deep-level transient spectroscopy measurements reveal that the concentration of the E 1 level is promoted by the introduction of H, in contrast to what is observed in samples heat-treated in an Ar flow. We further find the E 1 level to be stable against heat treatments at 650 K, both with and without an applied reverse-bias voltage. Potential candidates for the defect origin of E 1 are investigated using hybrid-functional calculations, and three types of defect complexes involving H are found to exhibit charge-state transition levels compatible with E 1 , including substitutional H at one of the threefold coordinated O sites, Ga-substitutional shallow donor impurities passivated by H, and certain configurations of singly hydrogenated Ga–O divacancies. Among these types, only the latter exhibit H binding energies that are consistent with the observed thermal stability of E 1. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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