Topology of PbSnTe:In Layers Versus Indium Concentration.

Autor:	Ishchenko, D. V., Akimov, A. N., Akhundov, I. O., Golyashov, V. A., Klimov, A. E., Loginov, A. B., Loginov, B. A., Pashchin, N. S., Tarasov, A. S., Fedosenko, E. V., Sherstyakova, V. N.
Předmět:	INDIUM ATOMIC force microscopy BUFFER layers TOPOLOGY SOLID solutions
Zdroj:	Technical Physics; Jul2021, Vol. 66 Issue 7, p878-882, 5p
Abstrakt:	The surface topology of epitaxial films of lead tin telluride solid solution (including with In additive, Pb1 –xSnxTe:In) has been examined using atomic force microscopy. The films have been grown on BaF2(111) single-crystal substrates and on a CaF2/BaF2 buffer layer covering a Si(111) wafer. It has been shown that the relief statistical parameters depend on film growth conditions and the incorporation mechanism of indium, an excess amount of which has been detected on the surface by ex situ XPS. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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