| Autor: |
Preobrazhenskii, V. V., Chistokhin, I. B., Putyato, M. A., Valisheva, N. A., Emelyanov, E. A., Petrushkov, M. O., Pleshkov, A. S., Neizvestny, I. G., Ryabtsev, I. I. |
| Zdroj: |
Optoelectronics Instrumentation & Data Processing; Sep2021, Vol. 57 Issue 5, p485-493, 9p |
| Abstrakt: |
The design and fabrication of a single photon detector based on InP/InGaAs/InP single-photon avalanche diodes (SPADs) operating in Geiger mode at a telecommunication wavelength of 1550 nm are discussed. The SPAD design, the method for obtaining InP/InGaAs/InP heterostructures by molecular beam epitaxy, fabrication of SPAD chips using planar technology, and specific features of selective zinc doping of -regions in the InP layer of the developed electronic circuits for measuring main SPAD parameters are described. Preliminary results of measurements of the parameters of the fabricated SPADs are presented. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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