Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates.

Autor:	Cherkashin, N. A., Sakharov, A. V., Nikolaev, A. E., Lundin, V. V., Usov, S. O., Ustinov, V. M., Grashchenko, A. S., Kukushkin, S. A., Osipov, A. V., Tsatsul'nikov, A. F.
Předmět:	EPITAXY HETEROSTRUCTURES BUFFER layers DISLOCATION density ORGANOMETALLIC compounds
Zdroj:	Technical Physics Letters; Oct2021, Vol. 47 Issue 10, p753-756, 4p
Abstrakt:	Light-emitting III–N heterostructures are grown by gas-phase epitaxy from organometallic compounds on SiC/Si (111) templates (substrates) formed using matched atomic substitution. Investigations of the optical and structural properties of heterostructures are carried out in order to reveal the formation of defects in the structures. It is shown that such heterostructures exhibit specific features of the growth of the (Al,Ga)N buffer layer associated with the presence of pores in Si under the SiC/Si interface. The use of an optimized buffer layer design makes it possible to significantly reduce the dislocation density and form an active region with good structural quality. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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