Elemental and Structural Mapping of Czochralski-Grown Bulk (AlxGa1 –x)2O3 Crystals.

Autor:	Bauman, D. A., P'yankova, L. A., Kremleva, A. V., Spiridonov, V. A., Panov, D. Yu., Zakgeim, D. A., Bakhvalov, A. S., Odnoblyudov, M. A., Romanov, A. E., Bugrov, V. E.
Předmět:	X-ray fluorescence CRYSTALS SCANNING electron microscopy X-ray diffraction
Zdroj:	Technical Physics Letters; Mar2021, Vol. 47 Issue 3, p218-221, 4p
Abstrakt:	The aluminum distribution in the surface layer of an (AlxGa1 –x)2O3 crystal grown on a sapphire seed by the Czochralski method has been studied using X-ray fluorescence and X-ray diffraction mapping and scanning electron microscopy. It is shown that the aluminum distribution correlates with a change in the physical broadening of the diffraction maxima of the (h00) plane system of the crystal and is related to a distance from the seeding zone. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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