Autor: |
Fenning Jing, Hao Tong, Chunming Wang |
Předmět: |
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Zdroj: |
Journal of Solid State Electrochemistry; Oct2004, Vol. 8 Issue 11, p877-881, 10p |
Abstrakt: |
The anodic stripping behavior of the Ag seed layers on a p-silicon (100) wafer was studied by cyclic voltammetry (CV). The seed layers were prepared by immersing the silicon wafer in a solution of 0.005 M AgNO 3+0.06 M HF at room temperature. Then the layer adhered wafers were used as the work electrodes. The oxidation energy of the Ag monolayer based on the Si-Ag combination was observed and the oxidation energy of the Ag multilayer based on the Ag-Ag combination was also found. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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