Investigation of the deposition features and characteristics of diffusion-barrier layers of Ti-TiN for metallization in MIS-transistor structures with a vertical channel.
| Autor: | Gornostay-Polsky, V. S., Shevyakov, V. I. |
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| Zdroj: | Proceedings of SPIE; 5/4/2022, Vol. 12157, p121571A-121571A-4, 1p |
| Databáze: | Complementary Index |
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