| Autor: |
Abe, Yuta, Chaen, Akihumi, Sometani, Mitsuru, Harada, Shinsuke, Yamazaki, Yuichi, Ohshima, Takeshi, Umeda, Takahide |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 2/7/2022, Vol. 120 Issue 6, p1-6, 6p |
| Abstrakt: |
Color centers in silicon carbide (4H-SiC) are potentially usable as spin defects for quantum sensing and quantum information technology. In particular, neutral divacancies (the P6/P7centers, VSiVC0) and a certain type of silicon vacancies (the TV2a center, VSi- at the k site) are promising for addressing and manipulating single spins. Although the TV2a spin is readable at room temperature, the readout techniques have been limited to luminescence-based ones (e.g., optically detected magnetic resonance). In this study, we demonstrated electrical detection of TV2a-type silicon vacancies at room temperature by using electrically detected magnetic resonance on 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs). TV2a spin defects were embedded in the channel region of well-defined 4H-SiC MOSFETs via controlled proton irradiation. The number of detected TV2a spins was estimated to be ∼105. We also found that the charge state of the TV2a spin defect can be controlled by varying the gate voltage applied to the MOSFET. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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