Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors.

Autor:	Moxim, Stephen J., Sharov, Fedor V., Hughart, David R., Haase, Gaddi S., McKay, Colin G., Lenahan, Patrick M.
Předmět:	DIELECTRIC breakdown METAL oxide semiconductor field-effect transistors MAGNETIC measurements TRANSISTORS MAGNETIC resonance MAGNETORESISTANCE TIME pressure
Zdroj:	Applied Physics Letters; 2/7/2022, Vol. 120 Issue 6, p1-6, 6p
Abstrakt:	Electrically detected magnetic resonance and near-zero-field magnetoresistance measurements were used to study atomic-scale traps generated during high-field gate stressing in Si/SiO2 MOSFETs. The defects observed are almost certainly important to time-dependent dielectric breakdown. The measurements were made with spin-dependent recombination current involving defects at and near the Si/SiO2 boundary. The interface traps observed are Pb0 and Pb1 centers, which are silicon dangling bond defects. The ratio of Pb0/Pb1 is dependent on the gate stressing polarity. Electrically detected magnetic resonance measurements also reveal generation of E′ oxide defects near the Si/SiO2 interface. Near-zero-field magnetoresistance measurements made throughout stressing reveal that the local hyperfine environment of the interface traps changes with stressing time; these changes are almost certainly due to the redistribution of hydrogen near the interface. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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