High-Tc Superconducting Memory Cell.

Autor: Miloshevsky, Alexander, Nair, Niketh, Imam, Neena, Braiman, Yehuda
Předmět:
Zdroj: Journal of Superconductivity & Novel Magnetism; Feb2022, Vol. 35 Issue 2, p373-382, 10p
Abstrakt: In this paper, operational principles of a cryogenic memory cell that utilizes high-temperature superconductors (high-Tc) are presented. Such a cell consists of three inductively coupled Josephson junctions coupled via inductors. Design and operational logic of this type of cell were recently introduced and demonstrated for low temperature 4 K environment. The basic memory cell operations (read, write, reset) can be implemented on the same simple circuit and both destructive and non-destructive memory cell operations can be realized. Here, we present the design principles and computational validation of basic memory cell operations (write, read, and reset) for the high-Tc memory cell. Our results for the high-Tc memory cell operations show very good resemblance with the previously presented low-temperature 4 K memory cell operations. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index