| Autor: |
Beleniotis, Petros, Schnieder, Frank, Krause, Sascha, Haque, Sanaul, Rudolph, Matthias |
| Předmět: |
|
| Zdroj: |
International Journal of Microwave & Wireless Technologies; Mar2022, Vol. 14 Issue 2, p134-142, 9p |
| Abstrakt: |
Large-signal modeling of Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) demands a proper description of trapping effects. In this paper, a new, simplified yet accurate drain-lag description is proposed, enhancing the simulation accuracy and the extraction flow of the physics-based compact model ASM-HEMT. The present study investigates the impact of drain lag on specific physical phenomena, focusing on the relation between trap states, surface-potential calculations, and electron transport properties. It is supplemented with a revised extraction procedure, minimizing the required measurements, thereby the undesired consequences of several passes on the same device, using pulsed I-V and pulsed S-parameters only, and approaches for efficient and accurate simulation results. We show that the proposed trap model is a determinative tool for simulating both small and large-signal behavior predicting precisely S-parameters and load-pull performance. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
