| Abstrakt: |
The presented topology in this paper represents a boosting topology known as extended boost active switch‐controlled switched inductor Z‐source inverter (EBASCSI‐ZSI). The presented topology has the ability to provide high boost output voltage with lower shoot‐through duty cycle. Three existing topologies in the field of Z‐source inverter, namely, qZSI, DA‐qZSI, and CA‐qZSI, have been compared with the presented topology. It has been found that the boosting factor of the presented topology is higher compared to the three topologies. The presented topology has used the same number of inductors and a less capacitor compared to CA‐qZSI topology, the same number of inductors and capacitors as compared to DA‐qZSI topology, a more capacitor, and an inductor compared to qZSI topology. The voltage stress across the capacitors of the presented topology is approximately the same compared to CA‐qZSI topology at higher shoot‐through state, and the voltage stress is more compared to DA‐qZSI and qZSI topologies at the same shoot‐through state. The current stress across the inductors of the presented topology is similar across some inductors of the DA‐qZSI and CA‐qZSI topologies while in some other inductors, it is lower than that of CA‐qZSI topology. The presented topology has been designed with a common ground between the source and inverter bridge while drawing continuous current from the source. The simulation model and its hardware prototype have been developed in the laboratory. The theoretical formulae obtained from the proposed model are matching with outcome of the simulation and hardware model. [ABSTRACT FROM AUTHOR] |
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