| Autor: |
Jou, Jau-Ji, Shih, Tien-Tsorng, Hsu, Hao-Wen |
| Předmět: |
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| Zdroj: |
Circuits, Systems & Signal Processing; Feb2022, Vol. 41 Issue 2, p621-635, 15p |
| Abstrakt: |
In this article, a wide-bandwidth, fully differential transimpedance amplifier (TIA) is implemented in Taiwan Semiconductor Manufacturing Company 90-nm complementary metal–oxide–semiconductor technology. The regulated cascode circuit has low input impedance and is used for the input stage of the TIA. The core amplifier is a fully differential amplifier circuit, paralleling with a differentiator that is capable of enhancing the bandwidth of the TIA. The inductorless TIA has a differential transimpedance gain of 40 dBΩ, a bandwidth of 25.85 GHz, and an average input-referred current noise density of 25 pA/√Hz. The TIA chip has a power consumption of 29 mW with a supply voltage of 1 V, and the chip area is 0.164 mm2. In the chip testing, the 32-Gb/s non-return-to-zero (NRZ) and the 40-Gb/s four-level pulse amplitude modulation (PAM-4) eye diagrams are measured and are sufficiently clear. Our TIA can be applied in a 32-Gb/s NRZ and a 40-Gb/s PAM-4 optical receiver. [ABSTRACT FROM AUTHOR] |
| Databáze: |
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