| Autor: |
Filippone, Francesco, Younis, Saeed, Mattioli, Giuseppe, Felici, Marco, Blundo, Elena, Polimeni, Antonio, Pettinari, Giorgio, Giubertoni, Damiano, Sterzer, Eduard, Volz, Kerstin, Fekete, Dan, Kapon, Eli, Amore Bonapasta, Aldo |
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| Zdroj: |
Advanced Functional Materials; 1/26/2022, Vol. 32 Issue 5, p1-9, 9p |
| Abstrakt: |
In dilute nitride InyGa1−yAs1−xNx alloys, a spatially controlled tuning of the energy gap can be realized by combining the introduction of N atoms—inducing a significant reduction of this parameter—with that of hydrogen atoms, which neutralize the effect of N. In these alloys, hydrogen forms N–H complexes in both Ga‐rich and In‐rich N environments. Here, photoluminescence measurements and thermal annealing treatments show that, surprisingly, N neutralization by H is significantly inhibited when the number of In‐N bonds increases. Density functional theory calculations account for this result and reveal an original, physical phenomenon: only in the In‐rich N environment, the InyGa1−yAs host matrix exerts a selective action on the N–H complexes by hindering the formation of the complexes more effective in the N passivation. This thoroughly overturns the usual perspective of defect‐engineering by proposing a novel paradigm where a major role pertains to the defect‐surrounding matrix. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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