| Autor: |
Pavan, Ch. L. N., Divakaruni, Rama, Chakravorty, Anjan, Nair, Deleep R. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Feb2022, Vol. 69 Issue 2, p456-461, 6p |
| Abstrakt: |
Here for the first time, we report on the characterization and analysis of random telegraph noise (RTN) in silicon-germanium (SiGe) channel pMOSFETs without a silicon-cap layer. A detailed analysis of traps causing two-level RTN is presented. The trap parameters and RTN magnitude are computed. It was observed that the impact of RTN is similar when compared with silicon channel pFETs from a similar process node with a comparable ${T}_{\text{inv}}$. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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