| Autor: |
Tominaga, Takaaki, Iwamatsu, Toshiaki, Nakao, Yukiyasu, Amishiro, Hiroyuki, Watanabe, Hiroshi, Tomohisa, Shingo, Miura, Naruhisa, Nakata, Shuhei |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Jan2022, Vol. 69 Issue 1, p285-290, 6p |
| Abstrakt: |
Influence of the p-type contact resistance to the p-body region ($\rho _{\text {body}}$) on the switching characteristics of 4H-silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) has been investigated. Comparative measurements of the devices with different $\rho _{\text {body}}$ have experimentally verified an impact of a high $\rho _{\text {body}}$ on increasing the switching loss. Moreover, simulation analysis has revealed that a high $\rho _{\text {body}}$ increases the fluctuation in the p-body potential during the switching process, and it leads to a decreased rate of change of the drain–source voltage ($dV_{\text {ds}}$ /dt), thereby increasing the switching loss. The decreased $dV_{\text {ds}} /$ dt is attributed to a decrease in the discharging and charging current of the feedback capacitance during the turn-on and turn-off periods, respectively, owing to a high fluctuating p-body potential, which has been clarified by focusing the deviation in the threshold voltage due to the body bias effect and in the gate current through the capacitance between the p-body region and the gate electrode. Furthermore, at a high switching speed, a substantial increase in the calculated turn-on and turn-off loss owing to a high $\rho _{\text {body}}$ of $4\times10$ −3 $\Omega \cdot $ cm2 approximates 20% and 50%, respectively. The findings highlight the necessity of precisely controlling $\rho _{\text {body}}$ to ensure a desirable switching loss of 4H-SiC MOSFETs, especially at a high switching speed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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