Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111).
| Autor: | Volkov, Roman, Borgardt, Nikolai I., Konovalov, Oleg V., Fernandez-Garrido, Sergio, Brandt, Oliver, Kaganer, Vladimir M. |
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| Zdroj: | Nanoscale Advances; 1/21/2022, Vol. 4 Issue 2, p562-572, 11p |
| Databáze: | Complementary Index |
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