Numerical Modeling of the Radiation Heating of Various Semiconductor Heterostructures.

Autor: Sivykh, G. F., Petrov, N. Yu.
Zdroj: Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Nov2021, Vol. 15 Issue 6, p1321-1325, 5p
Abstrakt: The effect of the epitaxial-layer thickness on the temperature of various samples of heterostructures with significantly different absorption coefficients as a result of its radiation heating is studied. It is shown that the beginning of growth of the epitaxial layer is accompanied by an abrupt increase in temperature, which is caused by growth in the reflection coefficient at the sample boundary due to the appearance of a layer with optical properties that differ from those of the substrate. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index