| Autor: |
Mun-Soo Park, Inmook Na, Wie, Chu R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/1/2005, Vol. 97 Issue 1, p014503, 6p, 1 Diagram, 2 Graphs |
| Abstrakt: |
n-channel power vertical double-diffused metal-oxide-semiconductor field-effect-transistor (VDMOSFET) devices were subjected to a high electric field stress or to a x-ray radiation. The current-voltage and capacitance-voltage measurements show that the channel-side interface and the drain-side interface are affected differently in the case of high electric field stress, whereas the interfaces are nearly uniformly affected in the case of x-ray radiation. This paper also shows that for the gated diode structure of VDMOSFET, the direct-current current-voltage technique measures only the drain-side interface; the subthreshold current-voltage technique measures only the channel-side interface; and the capacitance-voltage technique measures both interfaces simultaneously and clearly distinguishes the two interfaces. The capacitance-voltage technique is suggested to be a good quantitative method to examine both interface regions by a single measurement. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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