| Autor: |
Liang, Zhiwen, Du, Hanghai, Yuan, Ye, Wang, Qi, Kang, Junjie, Zhou, Hong, Zhang, Jincheng, Hao, Yue, Wang, Xinqiang, Zhang, Guoyi |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 12/20/2021, Vol. 119 Issue 25, p1-5, 5p |
| Abstrakt: |
In this Letter, an ultra-thin AlGaN/GaN heterostructure field effect transistor (HFET) with a total thickness of ∼200 nm was fabricated on sapphire substrates by combing physical vapor deposition and metal organic chemical vapor deposition growth methods. Thanks to the absence of a conventional semi-insulating thick GaN buffer by taking advantage of an ex situ sputtered AlN nucleation layer, we achieved a profound soft breakdown voltage of 1700 V accompanied by a 12.5 Ω·mm on-resistance and a low off-state leakage of 0.1 μA/mm in such ultra-thin HFET devices. Our work demonstrates an alternative strategy to fabricate GaN based power devices with high breakdown voltage and low cost. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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