Dynamics of Stress in Films of Metals on Silicon During Vacuum Heat Treatment.

Autor:	Dzhuplin, V. N., Klimin, V. S., Morozova, Yu. V., Rezvan, A. A., Vakulov, Z. E., Ageev, O. A.
Předmět:	METALLIC films SILICON films HEAT treatment TANTALUM films HEAT treatment of metals TANTALUM NICKEL films
Zdroj:	Russian Microelectronics; Nov2021, Vol. 50 Issue 6, p412-419, 8p
Abstrakt:	The effect of the vacuum heat treatment of metal films on the surface of silicon substrates on their morphology, interaction with the substrate, the dynamics of macrostresses in the film-substrate system, and the possibility of defect formation is studied. Experimental studies are carried out for films of vanadium, chromium, tantalum, nickel, and titanium. The regularities of the influence of heat treatment modes on the characteristics of the resulting films are determined. It is shown that tantalum films are most promising for the formation of heat-resistant metallization of IMCs due to the absence of high voltages in them up to 850°C and neutrality with respect to a silicon substrate. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink