| Autor: |
Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Kopylova, T. N., Degtyarenko, K. M. |
| Předmět: |
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| Zdroj: |
Russian Physics Journal; Nov2021, Vol. 64 Issue 7, p1281-1288, 8p |
| Abstrakt: |
Experimental studies of the admittance of MIS structures based on pentacene with a two-layer insulator SiO2–Al2O3 and back contacts made of various materials (Au, Al, In, and Ag) have been carried out in a wide range of frequencies, temperatures, and biases. The concentration of holes in the organic pentacene film found from the capacitance-voltage characteristics took rather high values (in the range (4–40) · 1017 cm–3). The magnitude of the hysteresis of electrophysical characteristics turned out to be minimal for structures with Ag and In back contacts. Significant hysteresis was found for structures with back contacts made of Au and Al at 300 K. For the structure with an Al back contact, a maximum capacitance was observed at the forward voltage sweep in weak accumulation mode, which can be associated with the recharge of the surface state level at the interface between the inorganic insulator and pentacene. An equivalent circuit of a pentacene-based MIS structure is proposed, which allows one to calculate the frequency dependences of the impedance under various conditions. The values of the equivalent circuit elements are found at various biases and temperatures. For structures with back contacts made of Au and Ag, maxima in the temperature dependences of the conductivity associated with the recharge of bulk traps in the organic pentacene film were found. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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