| Autor: |
Ozdemir, Cenk Ibrahim, De Koninck, Yannick, Yudistira, Didit, Kuznetsova, Nadezda, Baryshnikova, Marina, Van Thourhout, Dries, Kunert, Bernardette, Pantouvaki, Marianna, Van Campenhout, Joris |
| Zdroj: |
Journal of Lightwave Technology; 8/15/2021, Vol. 39 Issue 16, p5263-5269, 7p |
| Abstrakt: |
We report on high-quality InGaAs/GaAs multi-quantum well waveguide photodetectors, monolithically integrated through metalorganic vapor-phase selective-area epitaxial growth and contact metallization in a 300-mm CMOS pilot line. The photodetectors are implemented using the nano-ridge engineering concept, leveraging aspect-ratio trapping in combination with precise control of the nano-ridge cross section dimensions and composition. The InGaAs/GaAs p-i-n nano-ridge photodetectors are shown to achieve high internal responsivities of up to 0.65 A/W at −1 V bias and 1020 nm wavelength. A clear correlation is observed between measured responsivity and contact-plug design, correlating well with simulation models. In addition, a record-low dark current density of 1.98 × 10−8A/cm2 and low absolute dark currents of <1 pA are demonstrated, illustrating the high quality of the III-V materials and effective in-situ InGaP surface passivation layers. Initial RF measurements suggest RC-limited photodetection bandwidths in the GHz range. These results illustrate the strong potential of the III-V/Si nano-ridge epitaxy and waveguide device concept, to complement the Silicon Photonics toolbox with high-quality, high-throughput III-V functionality. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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