| Autor: |
Dobush, Igor M., Vasil'evskii, Ivan S., Zykov, Dmitry D., Bragin, Dmitry S., Salnikov, Andrei S., Popov, Artem A., Gorelov, Andrey A., Kargin, Nikolay I. |
| Předmět: |
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| Zdroj: |
Electronics (2079-9292); Nov2021, Vol. 10 Issue 22, p2775, 1p |
| Abstrakt: |
This work presents a process design kit (PDK) for a 0.15 μm GaAs pHEMT process for low-noise MMIC applications developed for AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa-resistors, capacitors, inductors, and transistors. The developed PDK can be used in technology transfer or education. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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