| Autor: |
Mane, Somesh, Semwal, Sandeep, Kranti, Abhinav |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Sep2021, Vol. 68 Issue 9, p4797-4800, 4p |
| Abstrakt: |
The operation of reconfigurable field effect transistor (RFET) is governed by Schottky barrier, ungated regions as well as control and polarity gates. The inherent architecture of RFET, apart from lowering the effective drain bias, impedes the use of existing mobility extraction methodologies. In this brief, we propose a simple and effective methodology to evaluate the resistance offered by various regions, ascertain the effective drain bias across the un-gated transistor, and extract apparent low field mobility and its degradation coefficients in RFET. The developed analytical expressions for drain current (${I}_{{\text {DS}}}$) and transconductance (${g}_{m}$) of RFET are able to accurately predict current (${I}_{\text {DS}}$) - control gate (${V}_{\text {CG}}$), and ${g}_{m}$ – ${V}_{\text {CG}}$ characteristics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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